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  5. FQN1N60CBU

ON Semiconductor - FQN1N60CBU

KEY Part #: K6407917

[807pcs Stock]

    Part Number:
    FQN1N60CBU
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 600V 0.3A TO-92.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Zener - Single, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQN1N60CBU electronic components. FQN1N60CBU can be shipped within 24 hours after order. If you have any demands for FQN1N60CBU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQN1N60CBU Product Attributes

    Part Number : FQN1N60CBU
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 600V 0.3A TO-92
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 300mA (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 11.5 Ohm @ 150mA, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 170pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 1W (Ta), 3W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-92-3
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)

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