IXTN102N65X2 Pricing (USD) [3922pcs Stock]
- 1 pcs$12.14773
- 10 pcs$11.23827
- 100 pcs$9.59819
- Part Number:
- IXTN102N65X2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 650V 76A X2 SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXTN102N65X2 electronic components. IXTN102N65X2 can be shipped within 24 hours after order. If you have any demands for IXTN102N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN102N65X2 Product Attributes
Part Number :
IXTN102N65X2
Manufacturer :
IXYS
Description :
MOSFET N-CH 650V 76A X2 SOT-227
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
30 mOhm @ 51A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
10900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
595AW (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227
Package / Case :
SOT-227-4, miniBLOC
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