2SK2009TE85LF Pricing (USD) [498647pcs Stock]
- 1 pcs$0.07418
- Part Number:
- 2SK2009TE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 0.2A SMINI.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage 2SK2009TE85LF electronic components. 2SK2009TE85LF can be shipped within 24 hours after order. If you have any demands for 2SK2009TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK2009TE85LF Product Attributes
Part Number :
2SK2009TE85LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 0.2A SMINI
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id :
1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
70pF @ 3V
FET Feature :
-
Power Dissipation (Max) :
200mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-59-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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