IXFN55N50F Pricing (USD) [2462pcs Stock]
- 1 pcs$21.78900
- 10 pcs$20.37454
- 25 pcs$18.84371
- 100 pcs$17.66600
- 250 pcs$16.48825
- Part Number:
- IXFN55N50F
- Manufacturer:
- IXYS-RF
- Detailed description:
- MOSFET N-CH 500V 55A SOT227B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS-RF IXFN55N50F electronic components. IXFN55N50F can be shipped within 24 hours after order. If you have any demands for IXFN55N50F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN55N50F Product Attributes
Part Number :
IXFN55N50F
Manufacturer :
IXYS-RF
Description :
MOSFET N-CH 500V 55A SOT227B
Series :
HiPerRF™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
85 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
600W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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