Microsemi Corporation - JANTX1N6641US

KEY Part #: K6427418

JANTX1N6641US Pricing (USD) [6983pcs Stock]

  • 1 pcs$5.93012
  • 100 pcs$5.90062

Part Number:
JANTX1N6641US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 50V 300MA B-MELF.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF and Power Driver Modules ...
Competitive Advantage:
We specialize in Microsemi Corporation JANTX1N6641US electronic components. JANTX1N6641US can be shipped within 24 hours after order. If you have any demands for JANTX1N6641US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N6641US Product Attributes

Part Number : JANTX1N6641US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 50V 300MA B-MELF
Series : Military, MIL-PRF-19500/609
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 300mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 300mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 5ns
Current - Reverse Leakage @ Vr : 100µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 175°C

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