PSMN6R3-120ESQ Pricing (USD) [33519pcs Stock]
- 1 pcs$1.22955
- 10 pcs$1.05236
- 100 pcs$0.84565
- 500 pcs$0.65772
- 1,000 pcs$0.54496
- Part Number:
- PSMN6R3-120ESQ
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 120V 70A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN6R3-120ESQ electronic components. PSMN6R3-120ESQ can be shipped within 24 hours after order. If you have any demands for PSMN6R3-120ESQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN6R3-120ESQ Product Attributes
Part Number :
PSMN6R3-120ESQ
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 120V 70A I2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
120V
Current - Continuous Drain (Id) @ 25°C :
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
207.1nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11384pF @ 60V
FET Feature :
-
Power Dissipation (Max) :
405W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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