HTNFET-D Pricing (USD) [230pcs Stock]
- 1 pcs$214.11918
- Part Number:
- HTNFET-D
- Manufacturer:
- Honeywell Aerospace
- Detailed description:
- MOSFET N-CH 55V 8-DIP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Honeywell Aerospace HTNFET-D electronic components. HTNFET-D can be shipped within 24 hours after order. If you have any demands for HTNFET-D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTNFET-D Product Attributes
Part Number :
HTNFET-D
Manufacturer :
Honeywell Aerospace
Description :
MOSFET N-CH 55V 8-DIP
Series :
HTMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
-
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id :
2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
4.3nC @ 5V
Vgs (Max) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 28V
FET Feature :
-
Power Dissipation (Max) :
50W (Tj)
Operating Temperature :
-55°C ~ 225°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
8-CDIP-EP
Package / Case :
8-CDIP Exposed Pad
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