Diodes Incorporated - DMTH3004LK3-13

KEY Part #: K6394162

DMTH3004LK3-13 Pricing (USD) [174789pcs Stock]

  • 1 pcs$0.21161
  • 2,500 pcs$0.18729

Part Number:
DMTH3004LK3-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 30V 21A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH3004LK3-13 electronic components. DMTH3004LK3-13 can be shipped within 24 hours after order. If you have any demands for DMTH3004LK3-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH3004LK3-13 Product Attributes

Part Number : DMTH3004LK3-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 30V 21A TO252
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 2370pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63