Toshiba Semiconductor and Storage - SSM6L35FE,LM

KEY Part #: K6523188

SSM6L35FE,LM Pricing (USD) [1298908pcs Stock]

  • 1 pcs$0.05267
  • 4,000 pcs$0.05240

Part Number:
SSM6L35FE,LM
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N/P-CH 20V 0.18A/0.1A ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6L35FE,LM electronic components. SSM6L35FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6L35FE,LM, Please submit a Request for Quotation here or send us an email:
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SSM6L35FE,LM Product Attributes

Part Number : SSM6L35FE,LM
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N/P-CH 20V 0.18A/0.1A ES6
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 180mA, 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 3V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)

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