Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 650V 8A TO276
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc) (158°C)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
170 mOhm @ 8A
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
720pF @ 35V
Power Dissipation (Max) :
200W (Tc)
Operating Temperature :
-55°C ~ 225°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-276
Package / Case :
TO-276AA