Toshiba Semiconductor and Storage - TRS12N65D,S1F

KEY Part #: K6470390

TRS12N65D,S1F Pricing (USD) [16652pcs Stock]

  • 1 pcs$2.61166
  • 30 pcs$2.59866

Part Number:
TRS12N65D,S1F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE ARRAY SCHOTTKY 650V TO247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TRS12N65D,S1F electronic components. TRS12N65D,S1F can be shipped within 24 hours after order. If you have any demands for TRS12N65D,S1F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TRS12N65D,S1F Product Attributes

Part Number : TRS12N65D,S1F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE ARRAY SCHOTTKY 650V TO247
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) (per Diode) : 6A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 6A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 90µA @ 650V
Operating Temperature - Junction : 175°C (Max)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247

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