Toshiba Semiconductor and Storage - HN1D02FU(T5L,F,T)

KEY Part #: K6474712

[6347pcs Stock]


    Part Number:
    HN1D02FU(T5L,F,T)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    DIODE ARRAY GP 80V 100MA US6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage HN1D02FU(T5L,F,T) electronic components. HN1D02FU(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for HN1D02FU(T5L,F,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN1D02FU(T5L,F,T) Product Attributes

    Part Number : HN1D02FU(T5L,F,T)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : DIODE ARRAY GP 80V 100MA US6
    Series : -
    Part Status : Active
    Diode Configuration : 2 Pair Common Cathode
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 80V
    Current - Average Rectified (Io) (per Diode) : 100mA
    Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
    Speed : Small Signal =< 200mA (Io), Any Speed
    Reverse Recovery Time (trr) : 4ns
    Current - Reverse Leakage @ Vr : 500nA @ 80V
    Operating Temperature - Junction : 125°C (Max)
    Mounting Type : Surface Mount
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : US6

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