RJK1003DPN-E0#T2 Pricing (USD) [66402pcs Stock]
- 1 pcs$1.36617
- Part Number:
- RJK1003DPN-E0#T2
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 100V 50A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Transistors - JFETs and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Renesas Electronics America RJK1003DPN-E0#T2 electronic components. RJK1003DPN-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJK1003DPN-E0#T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK1003DPN-E0#T2 Product Attributes
Part Number :
RJK1003DPN-E0#T2
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 100V 50A TO220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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