TSM061NA03CV RGG Pricing (USD) [194697pcs Stock]
- 1 pcs$0.18997
- Part Number:
- TSM061NA03CV RGG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET N-CH 30V 66A 8PDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - IGBTs - Single and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM061NA03CV RGG electronic components. TSM061NA03CV RGG can be shipped within 24 hours after order. If you have any demands for TSM061NA03CV RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM061NA03CV RGG Product Attributes
Part Number :
TSM061NA03CV RGG
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CH 30V 66A 8PDFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.1 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1136pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
44.6W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PDFN (3x3)
Package / Case :
8-PowerWDFN
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