Toshiba Semiconductor and Storage - RN1425TE85LF

KEY Part #: K6526043

RN1425TE85LF Pricing (USD) [989644pcs Stock]

  • 1 pcs$0.04407
  • 3,000 pcs$0.04385

Part Number:
RN1425TE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PREBIAS NPN 200MW SMINI.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Diodes - Zener - Arrays, Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Transistors - JFETs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1425TE85LF electronic components. RN1425TE85LF can be shipped within 24 hours after order. If you have any demands for RN1425TE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1425TE85LF Product Attributes

Part Number : RN1425TE85LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 200MW SMINI
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 470 Ohms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 300MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini

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