APT9F100B Pricing (USD) [16750pcs Stock]
- 1 pcs$2.71999
- 94 pcs$2.70646
- Part Number:
- APT9F100B
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1000V 9A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT9F100B electronic components. APT9F100B can be shipped within 24 hours after order. If you have any demands for APT9F100B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT9F100B Product Attributes
Part Number :
APT9F100B
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1000V 9A TO-247
Series :
POWER MOS 8™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2606pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
337W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 [B]
Package / Case :
TO-247-3
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