TSM2N7000KCT B0G Pricing (USD) [1272572pcs Stock]
- 1 pcs$0.02907
- Part Number:
- TSM2N7000KCT B0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET N-CHANNEL 60V 300MA TO92.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Transistors - Programmable Unijunction and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM2N7000KCT B0G electronic components. TSM2N7000KCT B0G can be shipped within 24 hours after order. If you have any demands for TSM2N7000KCT B0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM2N7000KCT B0G Product Attributes
Part Number :
TSM2N7000KCT B0G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CHANNEL 60V 300MA TO92
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7.32pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
400mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
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