Toshiba Semiconductor and Storage - 30JL2C41(F)

KEY Part #: K6477264

[5482pcs Stock]


    Part Number:
    30JL2C41(F)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    DIODE ARRAY GP 600V 30A TO3P.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Arrays ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage 30JL2C41(F) electronic components. 30JL2C41(F) can be shipped within 24 hours after order. If you have any demands for 30JL2C41(F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    30JL2C41(F) Product Attributes

    Part Number : 30JL2C41(F)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : DIODE ARRAY GP 600V 30A TO3P
    Series : -
    Part Status : Obsolete
    Diode Configuration : 1 Pair Common Cathode
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 600V
    Current - Average Rectified (Io) (per Diode) : 15A
    Voltage - Forward (Vf) (Max) @ If : 2V @ 15A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 50ns
    Current - Reverse Leakage @ Vr : 50µA @ 600V
    Operating Temperature - Junction : -40°C ~ 150°C
    Mounting Type : Through Hole
    Package / Case : TO-3P-3, SC-65-3
    Supplier Device Package : TO-3P(N)

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