Toshiba Semiconductor and Storage - CRG01(TE85L,Q,M)

KEY Part #: K6430150

CRG01(TE85L,Q,M) Pricing (USD) [1129485pcs Stock]

  • 1 pcs$0.03456
  • 3,000 pcs$0.03438

Part Number:
CRG01(TE85L,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 100V 700MA SFLAT.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage CRG01(TE85L,Q,M) electronic components. CRG01(TE85L,Q,M) can be shipped within 24 hours after order. If you have any demands for CRG01(TE85L,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CRG01(TE85L,Q,M) Product Attributes

Part Number : CRG01(TE85L,Q,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 100V 700MA SFLAT
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 700mA
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 700mA
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SOD-123F
Supplier Device Package : S-FLAT (1.6x3.5)
Operating Temperature - Junction : -40°C ~ 150°C

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