HN2D01JE(TE85L,F) Pricing (USD) [1060332pcs Stock]
- 1 pcs$0.03488
- Part Number:
- HN2D01JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- DIODE ARRAY GP 80V 100MA ESV. Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Thyristors - SCRs and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN2D01JE(TE85L,F) electronic components. HN2D01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN2D01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN2D01JE(TE85L,F) Product Attributes
Part Number :
HN2D01JE(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
DIODE ARRAY GP 80V 100MA ESV
Series :
-
Part Status :
Active
Diode Configuration :
2 Independent
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
80V
Current - Average Rectified (Io) (per Diode) :
100mA
Voltage - Forward (Vf) (Max) @ If :
1.2V @ 100mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
1.6ns
Current - Reverse Leakage @ Vr :
500nA @ 80V
Operating Temperature - Junction :
150°C (Max)
Mounting Type :
Surface Mount
Package / Case :
SOT-553
Supplier Device Package :
ESV
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