TPH3205WSBQA Pricing (USD) [4321pcs Stock]
- 1 pcs$11.73076
- 10 pcs$10.85188
- 100 pcs$9.26804
- Part Number:
- TPH3205WSBQA
- Manufacturer:
- Transphorm
- Detailed description:
- GANFET N-CH 650V 35A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Special Purpose, Diodes - Zener - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Transphorm TPH3205WSBQA electronic components. TPH3205WSBQA can be shipped within 24 hours after order. If you have any demands for TPH3205WSBQA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3205WSBQA Product Attributes
Part Number :
TPH3205WSBQA
Manufacturer :
Transphorm
Description :
GANFET N-CH 650V 35A TO247
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
62 mOhm @ 22A, 8V
Vgs(th) (Max) @ Id :
2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 8V
Vgs (Max) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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