STFW6N120K3 Pricing (USD) [11882pcs Stock]
- 1 pcs$3.46831
- 300 pcs$2.35695
- Part Number:
- STFW6N120K3
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 1200V 3.8A TO-3PF.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in STMicroelectronics STFW6N120K3 electronic components. STFW6N120K3 can be shipped within 24 hours after order. If you have any demands for STFW6N120K3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STFW6N120K3 Product Attributes
Part Number :
STFW6N120K3
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 1200V 3.8A TO-3PF
Series :
SuperMESH3™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.4 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
63W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ISOWATT-218FX
Package / Case :
ISOWATT218FX
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