Toshiba Semiconductor and Storage - MT3S113P(TE12L,F)

KEY Part #: K6462863

MT3S113P(TE12L,F) Pricing (USD) [221089pcs Stock]

  • 1 pcs$0.16730

Part Number:
MT3S113P(TE12L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
RF TRANS NPN 5.3V 7.7GHZ PW-MINI.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Thyristors - SCRs - Modules, Transistors - JFETs, Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage MT3S113P(TE12L,F) electronic components. MT3S113P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S113P(TE12L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT3S113P(TE12L,F) Product Attributes

Part Number : MT3S113P(TE12L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Series : -
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 5.3V
Frequency - Transition : 7.7GHz
Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
Gain : 10.5dB
Power - Max : 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Current - Collector (Ic) (Max) : 100mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-243AA
Supplier Device Package : PW-MINI

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