Toshiba Semiconductor and Storage - RN2111MFV,L3F

KEY Part #: K6526315

RN2111MFV,L3F Pricing (USD) [2968934pcs Stock]

  • 1 pcs$0.01246

Part Number:
RN2111MFV,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X34 PB-F VESM TRANSISTOR PD 150M.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN2111MFV,L3F electronic components. RN2111MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN2111MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2111MFV,L3F Product Attributes

Part Number : RN2111MFV,L3F
Manufacturer : Toshiba Semiconductor and Storage
Description : X34 PB-F VESM TRANSISTOR PD 150M
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM

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