Nexperia USA Inc. - PMXB350UPEZ

KEY Part #: K6421585

PMXB350UPEZ Pricing (USD) [905775pcs Stock]

  • 1 pcs$0.06045
  • 5,000 pcs$0.06015

Part Number:
PMXB350UPEZ
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET P-CH 20V 1.2A 3DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Transistors - JFETs and Diodes - RF ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PMXB350UPEZ electronic components. PMXB350UPEZ can be shipped within 24 hours after order. If you have any demands for PMXB350UPEZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMXB350UPEZ Product Attributes

Part Number : PMXB350UPEZ
Manufacturer : Nexperia USA Inc.
Description : MOSFET P-CH 20V 1.2A 3DFN
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 447 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id : 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 2.3nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 116pF @ 10V
FET Feature : -
Power Dissipation (Max) : 360mW (Ta), 5.68W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DFN1010D-3
Package / Case : 3-XDFN Exposed Pad