Vishay Siliconix - SI4511DY-T1-GE3

KEY Part #: K6524094

[3946pcs Stock]


    Part Number:
    SI4511DY-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N/P-CH 20V 7.2A 8-SOIC.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI4511DY-T1-GE3 electronic components. SI4511DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4511DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4511DY-T1-GE3 Product Attributes

    Part Number : SI4511DY-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N/P-CH 20V 7.2A 8-SOIC
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N and P-Channel
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 7.2A, 4.6A
    Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 9.6A, 10V
    Vgs(th) (Max) @ Id : 1.8V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 18nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : -
    Power - Max : 1.1W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package : 8-SO