FDD86113LZ Pricing (USD) [159974pcs Stock]
- 1 pcs$0.23121
- 2,500 pcs$0.22536
- Part Number:
- FDD86113LZ
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 4.2A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD86113LZ electronic components. FDD86113LZ can be shipped within 24 hours after order. If you have any demands for FDD86113LZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD86113LZ Product Attributes
Part Number :
FDD86113LZ
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 4.2A DPAK-3
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
104 mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
285pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 29W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-PAK (TO-252)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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