HUF75329D3ST Pricing (USD) [173708pcs Stock]
- 1 pcs$0.21399
- 2,500 pcs$0.21293
- Part Number:
- HUF75329D3ST
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 55V 20A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - TRIACs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor HUF75329D3ST electronic components. HUF75329D3ST can be shipped within 24 hours after order. If you have any demands for HUF75329D3ST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF75329D3ST Product Attributes
Part Number :
HUF75329D3ST
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 55V 20A DPAK
Series :
UltraFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 20V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
128W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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