SIS932EDN-T1-GE3 Pricing (USD) [365388pcs Stock]
- 1 pcs$0.10123
- Part Number:
- SIS932EDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH DL 30V PWRPAK 1212-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Power Driver Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIS932EDN-T1-GE3 electronic components. SIS932EDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS932EDN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS932EDN-T1-GE3 Product Attributes
Part Number :
SIS932EDN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH DL 30V PWRPAK 1212-8
Series :
TrenchFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
22 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id :
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 15V
Power - Max :
2.6W (Ta), 23W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® 1212-8 Dual
Supplier Device Package :
PowerPAK® 1212-8 Dual
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