Toshiba Semiconductor and Storage - 1SS226,LF

KEY Part #: K6470471

1SS226,LF Pricing (USD) [2391852pcs Stock]

  • 1 pcs$0.01546

Part Number:
1SS226,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
PB-F S-MINI M8 DIODE LF IFM3. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - TRIACs and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 1SS226,LF electronic components. 1SS226,LF can be shipped within 24 hours after order. If you have any demands for 1SS226,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS226,LF Product Attributes

Part Number : 1SS226,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : PB-F S-MINI M8 DIODE LF IFM3
Series : -
Part Status : Active
Diode Configuration : 1 Pair Series Connection
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 80V
Current - Average Rectified (Io) (per Diode) : 100mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 500nA @ 80V
Operating Temperature - Junction : 125°C (Max)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini

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