ITT Cannon, LLC - 120220-0161

KEY Part #: K7359522

120220-0161 Pricing (USD) [730635pcs Stock]

  • 1 pcs$0.05062
  • 6,000 pcs$0.04746
  • 12,000 pcs$0.04271
  • 30,000 pcs$0.04208
  • 60,000 pcs$0.04113

Part Number:
120220-0161
Manufacturer:
ITT Cannon, LLC
Detailed description:
UNIVERSAL CONTACT 2.5MM SMD. Battery Contacts
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : RF Transceiver Modules, RF Accessories, RFID Antennas, Balun, RFID, RF Access, Monitoring ICs, RF Shields, RFID Evaluation and Development Kits, Boards and RF Modulators ...
Competitive Advantage:
We specialize in ITT Cannon, LLC 120220-0161 electronic components. 120220-0161 can be shipped within 24 hours after order. If you have any demands for 120220-0161, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

120220-0161 Product Attributes

Part Number : 120220-0161
Manufacturer : ITT Cannon, LLC
Description : UNIVERSAL CONTACT 2.5MM SMD
Series : -
Part Status : Active
Type : Shield Finger, Pre-Loaded
Shape : -
Width : 0.043" (1.10mm)
Length : 0.192" (4.87mm)
Height : 0.098" (2.50mm)
Material : Beryllium Copper
Plating : Gold
Plating - Thickness : 5.906µin (0.15µm)
Attachment Method : Solder
Operating Temperature : -

You May Also Be Interested In
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.