Samsung Semiconductor - K4A4G085WF-BCTD

KEY Part #: K7359581

[20623pcs Stock]


    Part Number:
    K4A4G085WF-BCTD
    Manufacturer:
    Samsung Semiconductor
    Detailed description:
    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : LPDDR5, MODULE, LPDDR4X, GDDR6, HBM Aquabolt, LPDDR3, SLC Nand and LPDDR4 ...
    Competitive Advantage:
    We specialize in Samsung Semiconductor K4A4G085WF-BCTD electronic components. K4A4G085WF-BCTD can be shipped within 24 hours after order. If you have any demands for K4A4G085WF-BCTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G085WF-BCTD Product Attributes

    Part Number : K4A4G085WF-BCTD
    Manufacturer : Samsung Semiconductor
    Description : 4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Series : DDR4
    Density : 4 Gb
    Org. : 512M x 8
    Speed : 2666 Mbps
    Voltage : 1.2 V
    Temp. : 0 ~ 85 °C
    Package : 78FBGA
    Product Status : Mass Production

    You May Also Be Interested In
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.