Diodes Incorporated - DMJ70H1D3SJ3

KEY Part #: K6392941

DMJ70H1D3SJ3 Pricing (USD) [98319pcs Stock]

  • 1 pcs$0.39770
  • 75 pcs$0.37345

Part Number:
DMJ70H1D3SJ3
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH TO251.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Thyristors - SCRs and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Diodes Incorporated DMJ70H1D3SJ3 electronic components. DMJ70H1D3SJ3 can be shipped within 24 hours after order. If you have any demands for DMJ70H1D3SJ3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMJ70H1D3SJ3 Product Attributes

Part Number : DMJ70H1D3SJ3
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH TO251
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 700V
Current - Continuous Drain (Id) @ 25°C : 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 1.3 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13.9nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 351pF @ 50V
FET Feature : -
Power Dissipation (Max) : 41W (Tc)
Operating Temperature : -55°C ~ 155°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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