IXFT12N100F Pricing (USD) [7792pcs Stock]
- 1 pcs$6.45185
- 10 pcs$5.86572
- 100 pcs$4.98586
- 500 pcs$4.25265
- Part Number:
- IXFT12N100F
- Manufacturer:
- IXYS-RF
- Detailed description:
- MOSFET N-CH 1000V 12A TO268.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - Special Purpose and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS-RF IXFT12N100F electronic components. IXFT12N100F can be shipped within 24 hours after order. If you have any demands for IXFT12N100F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT12N100F Product Attributes
Part Number :
IXFT12N100F
Manufacturer :
IXYS-RF
Description :
MOSFET N-CH 1000V 12A TO268
Series :
HiPerRF™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 6A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268 (IXFT)
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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