TK040N65Z,S1F Pricing (USD) [8501pcs Stock]
- 1 pcs$4.84770
- Part Number:
- TK040N65Z,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- PB-F POWER MOSFET TRANSISTOR TO-.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK040N65Z,S1F electronic components. TK040N65Z,S1F can be shipped within 24 hours after order. If you have any demands for TK040N65Z,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK040N65Z,S1F Product Attributes
Part Number :
TK040N65Z,S1F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
PB-F POWER MOSFET TRANSISTOR TO-
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
57A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6250pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
360W (Tc)
Operating Temperature :
150°C
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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