GA10JT12-247 Pricing (USD) [2103pcs Stock]
- 1 pcs$10.16943
- 10 pcs$9.24469
- 25 pcs$8.55122
- 100 pcs$7.47449
- 250 pcs$6.81498
- Part Number:
- GA10JT12-247
- Manufacturer:
- GeneSiC Semiconductor
- Detailed description:
- TRANS SJT 1.2KV 10A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in GeneSiC Semiconductor GA10JT12-247 electronic components. GA10JT12-247 can be shipped within 24 hours after order. If you have any demands for GA10JT12-247, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10JT12-247 Product Attributes
Part Number :
GA10JT12-247
Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 1.2KV 10A
Series :
-
Part Status :
Obsolete
FET Type :
-
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
140 mOhm @ 10A
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
170W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AB
Package / Case :
TO-247-3
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