TSM9ND50CI Pricing (USD) [57375pcs Stock]
- 1 pcs$0.68150
- Part Number:
- TSM9ND50CI
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- 500V 9A 0.9O SINGLE N-CHANNEL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM9ND50CI electronic components. TSM9ND50CI can be shipped within 24 hours after order. If you have any demands for TSM9ND50CI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM9ND50CI Product Attributes
Part Number :
TSM9ND50CI
Manufacturer :
Taiwan Semiconductor Corporation
Description :
500V 9A 0.9O SINGLE N-CHANNEL
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
24.5nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1116pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ITO-220
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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