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  5. CXDM1002N TR

Central Semiconductor Corp - CXDM1002N TR

KEY Part #: K6402102

CXDM1002N TR Pricing (USD) [207824pcs Stock]

  • 1 pcs$0.19675
  • 1,000 pcs$0.19577
Part Number:
CXDM1002N TR
Manufacturer:
Central Semiconductor Corp
Detailed description:
MOSFET N-CH 100V 2A SOT-89.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Central Semiconductor Corp CXDM1002N TR electronic components. CXDM1002N TR can be shipped within 24 hours after order. If you have any demands for CXDM1002N TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CXDM1002N TR Product Attributes

Part Number : CXDM1002N TR
Manufacturer : Central Semiconductor Corp
Description : MOSFET N-CH 100V 2A SOT-89
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 5V
Vgs (Max) : 20V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-89
Package / Case : TO-243AA
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