SI1900DL-T1-GE3 Pricing (USD) [389558pcs Stock]
- 1 pcs$0.09495
- Part Number:
- SI1900DL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2 N-CH 30V SC70-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - JFETs and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI1900DL-T1-GE3 electronic components. SI1900DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1900DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1900DL-T1-GE3 Product Attributes
Part Number :
SI1900DL-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 30V SC70-6
Series :
TrenchFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
630mA (Ta), 590mA (Ta)
Rds On (Max) @ Id, Vgs :
480 mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
-
Power - Max :
300mW, 270mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Supplier Device Package :
SC-70-6
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