IXFB40N110P Pricing (USD) [2956pcs Stock]
- 1 pcs$16.93121
- 30 pcs$16.84698
- Part Number:
- IXFB40N110P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1100V 40A PLUS264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Single and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXFB40N110P electronic components. IXFB40N110P can be shipped within 24 hours after order. If you have any demands for IXFB40N110P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFB40N110P Product Attributes
Part Number :
IXFB40N110P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1100V 40A PLUS264
Series :
HiPerFET™, PolarP2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1100V
Current - Continuous Drain (Id) @ 25°C :
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
260 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
310nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1250W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS264™
Package / Case :
TO-264-3, TO-264AA
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