APTM100SK33T1G Pricing (USD) [3038pcs Stock]
- 1 pcs$14.25361
- 100 pcs$14.01469
- Part Number:
- APTM100SK33T1G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1000V 23A SP1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APTM100SK33T1G electronic components. APTM100SK33T1G can be shipped within 24 hours after order. If you have any demands for APTM100SK33T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM100SK33T1G Product Attributes
Part Number :
APTM100SK33T1G
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1000V 23A SP1
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
396 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
305nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
7868pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
390W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SP1
Package / Case :
SP1
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