Toshiba Semiconductor and Storage - RN1109MFV,L3F

KEY Part #: K6527810

[2707pcs Stock]


    Part Number:
    RN1109MFV,L3F
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    TRANS PREBIAS NPN 50V 500NA VESM.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Thyristors - DIACs, SIDACs and Transistors - IGBTs - Modules ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage RN1109MFV,L3F electronic components. RN1109MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1109MFV,L3F, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1109MFV,L3F Product Attributes

    Part Number : RN1109MFV,L3F
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS PREBIAS NPN 50V 500NA VESM
    Series : -
    Part Status : Active
    Transistor Type : NPN - Pre-Biased
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 47 kOhms
    Resistor - Emitter Base (R2) : 22 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
    Current - Collector Cutoff (Max) : 500nA
    Frequency - Transition : -
    Power - Max : 150mW
    Mounting Type : Surface Mount
    Package / Case : SOT-723
    Supplier Device Package : VESM