IRFB61N15DPBF Pricing (USD) [32358pcs Stock]
- 1 pcs$1.22074
- 10 pcs$1.04776
- 100 pcs$0.84180
- 500 pcs$0.65474
- 1,000 pcs$0.54250
- Part Number:
- IRFB61N15DPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 150V 60A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB61N15DPBF electronic components. IRFB61N15DPBF can be shipped within 24 hours after order. If you have any demands for IRFB61N15DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB61N15DPBF Product Attributes
Part Number :
IRFB61N15DPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 150V 60A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
32 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3470pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.4W (Ta), 330W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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