ON Semiconductor - NVMFS5A160PLZT3G

KEY Part #: K6392911

NVMFS5A160PLZT3G Pricing (USD) [68841pcs Stock]

  • 1 pcs$0.56799

Part Number:
NVMFS5A160PLZT3G
Manufacturer:
ON Semiconductor
Detailed description:
-60V7.7MOHMSINGLE.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Thyristors - SCRs - Modules, Power Driver Modules and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in ON Semiconductor NVMFS5A160PLZT3G electronic components. NVMFS5A160PLZT3G can be shipped within 24 hours after order. If you have any demands for NVMFS5A160PLZT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS5A160PLZT3G Product Attributes

Part Number : NVMFS5A160PLZT3G
Manufacturer : ON Semiconductor
Description : -60V7.7MOHMSINGLE
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7700pF @ 20V
FET Feature : -
Power Dissipation (Max) : 3.8W (Ta), 200W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN, 5 Leads

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