SI2312BDS-T1-GE3 Pricing (USD) [529776pcs Stock]
- 1 pcs$0.06982
- 3,000 pcs$0.06317
- Part Number:
- SI2312BDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 20V 3.9A SOT23-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - FETs, MOSFETs - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI2312BDS-T1-GE3 electronic components. SI2312BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2312BDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2312BDS-T1-GE3 Product Attributes
Part Number :
SI2312BDS-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V 3.9A SOT23-3
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
31 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id :
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
750mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3 (TO-236)
Package / Case :
TO-236-3, SC-59, SOT-23-3
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