Toshiba Semiconductor and Storage - 1SS403,H3F

KEY Part #: K6452925

1SS403,H3F Pricing (USD) [1505981pcs Stock]

  • 1 pcs$0.02592
  • 3,000 pcs$0.02579
  • 6,000 pcs$0.02242
  • 15,000 pcs$0.01906
  • 30,000 pcs$0.01794
  • 75,000 pcs$0.01682

Part Number:
1SS403,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 200V 100MA USC. Diodes - General Purpose, Power, Switching USC SW DIODE IFM=300mA
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 1SS403,H3F electronic components. 1SS403,H3F can be shipped within 24 hours after order. If you have any demands for 1SS403,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS403,H3F Product Attributes

Part Number : 1SS403,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 200V 100MA USC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 100mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 60ns
Current - Reverse Leakage @ Vr : 1µA @ 200V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : USC
Operating Temperature - Junction : 125°C (Max)

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