Toshiba Semiconductor and Storage - CUS10S30,H3F

KEY Part #: K6453540

CUS10S30,H3F Pricing (USD) [1461272pcs Stock]

  • 1 pcs$0.02671
  • 3,000 pcs$0.02658
  • 6,000 pcs$0.02392
  • 15,000 pcs$0.02126
  • 30,000 pcs$0.01993
  • 75,000 pcs$0.01772

Part Number:
CUS10S30,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE SCHOTTKY 30V 1A USC. Schottky Diodes & Rectifiers Single High-speed switching
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage CUS10S30,H3F electronic components. CUS10S30,H3F can be shipped within 24 hours after order. If you have any demands for CUS10S30,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CUS10S30,H3F Product Attributes

Part Number : CUS10S30,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE SCHOTTKY 30V 1A USC
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 230mV @ 100mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 500µA @ 30V
Capacitance @ Vr, F : 135pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : USC
Operating Temperature - Junction : 125°C (Max)

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