TP65H050WS Pricing (USD) [5775pcs Stock]
- 1 pcs$7.13493
- Part Number:
- TP65H050WS
- Manufacturer:
- Transphorm
- Detailed description:
- GANFET N-CH 650V 34A TO247-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Transphorm TP65H050WS electronic components. TP65H050WS can be shipped within 24 hours after order. If you have any demands for TP65H050WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TP65H050WS Product Attributes
Part Number :
TP65H050WS
Manufacturer :
Transphorm
Description :
GANFET N-CH 650V 34A TO247-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
12V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id :
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
119W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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