Taiwan Semiconductor Corporation - TSM9N90ECI C0G

KEY Part #: K6399592

TSM9N90ECI C0G Pricing (USD) [31595pcs Stock]

  • 1 pcs$1.30447

Part Number:
TSM9N90ECI C0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET N-CHANNEL 900V 9A ITO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Thyristors - SCRs, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM9N90ECI C0G electronic components. TSM9N90ECI C0G can be shipped within 24 hours after order. If you have any demands for TSM9N90ECI C0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM9N90ECI C0G Product Attributes

Part Number : TSM9N90ECI C0G
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CHANNEL 900V 9A ITO220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2470pF @ 25V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220AB
Package / Case : TO-220-3 Full Pack, Isolated Tab

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