Toshiba Semiconductor and Storage - 1SS387,L3F

KEY Part #: K6456629

1SS387,L3F Pricing (USD) [2750629pcs Stock]

  • 1 pcs$0.01419
  • 8,000 pcs$0.01412
  • 16,000 pcs$0.01200
  • 24,000 pcs$0.01130
  • 56,000 pcs$0.01059
  • 200,000 pcs$0.00941

Part Number:
1SS387,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 80V 100MA ESC. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 1SS387,L3F electronic components. 1SS387,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387,L3F Product Attributes

Part Number : 1SS387,L3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 80V 100MA ESC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 80V
Current - Average Rectified (Io) : 100mA
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 500nA @ 80V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-79, SOD-523
Supplier Device Package : ESC
Operating Temperature - Junction : 125°C (Max)

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